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Intellectual Property Law
: TinytechIPUS Patent 7764534 - Memristive memory cell with gate controlled diode
This patent from SanDisk3D teaches a variation of 1R1D memristive memory cells using a gate controlled vertical diode structure as an isolation element to avoid sneak paths. Claim 1 reads:
1. A nonvolatile memory cell, comprising: a gate controlled diode steering element, wherein the gate controlled diode steering element comprises a substantially pillar shaped diode steering element; and a resistivity switching element electrically connected to the gate controlled diode steering element.
Full post as published by TinytechIP on August 01, 2010 (boomark / email).
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