Intellectual Property Law

US Patent 7812342 - Thin film transistor having nano semiconductor sheet

This patent from Samsung teaches a new type of thin film transistor based on aligned semiconductor nanowire having application in the development of flexible electronic displays. Claim 1 reads:

1. An electronic device comprising:

a substrate; and

a thin film transistor formed over the substrate, the thin film transistor comprising:

an active layer including a channel region, a source region and a drain region, wherein the channel region comprises a plurality of microfibers extending generally in a direction, the microfibers comprising nanoparticles and a polymer, and the source and drain regions comprise a plurality of microfibers extending generally in a direction, the microfibers containing nanoparticles therein;

a gate electrode;

an insulating layer interposed between at least the channel region and the gate electrode;

a source electrode in contact with the nanoparticles of the source region; and

a drain electrode in contact with the nanoparticles of the drain region.

Full post as published by TinytechIP on October 18, 2010 (boomark / email).