Intellectual Property Law

US Patent 7854991 - Aligned SWCNT array with high purity and surface area

This patent from National Institute of Advanced Industrial Science and Technology teaches CVD growth methods for single walled carbon arrays resulting in high purity and surface area. Claim 1 reads:

1. A single-walled carbon nanotube bulk structure comprising a plurality of aligned single-walled carbon nanotubes,

wherein a specific surface area of the plurality of aligned single-walled carbon nanotubes is 800 m2/g or more and 2,500 m2/g or less, and

purity measured by fluorescence X-rays of the plurality of aligned single-walled carbon nanotubes is 98% or more.

Full post as published by TinytechIP on December 22, 2010 (boomark / email).